Enhanced UV detection by non-polar epitaxial GaN films
نویسندگان
چکیده
منابع مشابه
Ion Beam Assisted Deposition of Thin Epitaxial GaN Films
The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy <100 eV) is capable to modify the characteristics of the growing film without generating a large number of irradiation induced defects. The nitrogen ion beam assisted molecular beam epitaxy (ion energy <25 eV) ...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2015
ISSN: 2158-3226
DOI: 10.1063/1.4937742